-Jul.2001, Kyoto,Japan-
■ Crystal growth of BaZrO3 thin films under very low oxygen pressure Yasuhiro Kitano
■ Epitaxial growth of highly Ce doped Si films by Molecular Beam Epitaxy Takeshi Yokota
■ Structure-property relationship of Ce/Si interfaces fabricated by Molecular Beam Epitaxy
Takamasa Wada
■ Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by PLD
Kousuke Kakuno
■ Structure-Retention Property Relationship of YMnO3/Y2O3/Si capacitor Daisuke Ito
■ Electro-optic Property of ZnO:X (X=Li,Mg) Thin Films Takahiro Nagata
■ Magnetic properties of ferromagnetic ZnO:Ni films Wakano