Achievement

4th Asian Meeting on Ferroelectrics (AMF-4)
-Dec. 2003, Bangalore, India-
■ Present Status of Ferroelectric Gate Field Effect Transistors (Invited)　　Norifumi Fujimura

MRS 2003 fall meeting
-Nov. 2003, Boston, USA-
■ Magnetic and Ferroelectric Behaviors of Multi-Ferroic RMnO₃ Thin Films.　　Norifumi Fujimura
■ Investigation of Retention Properties for YMnO₃ Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors　　Takeshi Yoshimura

10th International Workshop on Oxide Electronics
-Sept. 2003 Augsburg, Germany-
■ Proposal of YMnO₃ Based Ferroic Gate FETs　　Norifumi Fujimura

The 10th European Meeting on Ferroelectricity
-Aug. 2003 Cambridge, UK-
■ Origin of the Retention Property of YMnO₃ Based MFIS Capacitors.　　Norifumi Fujimura
■ D-E Measurements for Ferroelectric Gate Capacitors.　　Takeshi Yoshimura