Achievement

International Symposium on Control of Semiconductor Interfaces (2nd ISCSI)
-Oct.1996　Karuizawa,Japan-
■ Bistability of Electroluminescence in InAlAs/InP Type II MQW diodes　　Yukihide Hakone

ICVGE-9(The 9th International Conference on Vapor Growth&Epitaxy)
-Aug.1996,Colorado,USA-
■ Stability of Ordered Structure in SiGe Films Examined by Strain Energy Calculation　　Tsutomu Araki
■ Formation of YMnO₃ Films Directly on Si Substrate　　Nobuaki Aoki
■ Effect of Ce Doping on the Growth of ZnO Thin Films　　Yasunori Morinaga
■ The Initial Stage of BaTiO₃ Epitaxial Films on Etched and Annealed SrTiO₃ Substrates
Takeshi Yoshimura

The 10th International Symposium on the Application of Ferroelectrics
-Aug.1996,-
■ Sr/Bi Ratio Effects for SrxBiyTa₂O₉ Grown by Pulsed Laser Ablation.　　Norifumi Fujimura

MRS-J(The Materials Research Society of Japan)
-May.1996,　Chiba,Japan-
■ Examination of Structural Stability of SiGe Ordering by Strain Energy Calculation　　Tsutomu Araki
■ Preparation of Oriented CuInSe₂ Thin Film at Low Substrate Temperature　　Takafumi Okuma

MRS 1996 Spring meeting
-Apr.1996, San Francisco, USA-
■ Fabrication of YMnO₃ Thin Films.: New Candidate for Non-Volatile Memory Device
Norifumi Fujimura