Equipment

Measurement

Ultrahigh-vacuum prober (Thermal Block; 20 - 773 K, 4 probes + back gate; equipped with a semiconductor device analyser [Keysight B1500A], gas-exposure systems, and quadrupole mass spectrometer)

High-vacuum prober (Thermal Block SB-LNP2S; 90 - 500 K, 4 probes + back gate; equipped with a semiconductor device analyser [Keysight B1500A], gas-exposure systems, wavelength-tunable light source from visible to to near-infrared, and impedance analyser [Hioki IM3570])

Ambient prober (Thermal block SB-ROOMP; at room temperature, 4 probes + back gate; equipped with a 2-channel sourcemeter [Keithley 2636A])

Prober (ESS Tech SP-0; 2 probes + back gate; equipped with a 2-channel sourcemeter [Keithley B2902A] and thermohygrostat) 

Analysis 

Micro-Raman scattering spectroscopy (Airix STR)

Scanning probe microscope (Hitachi High-Tech AFM5200S)

Kelvin probe (KP Technology UHVKP020)

Gas chromatograph (Shimadzu Nexis GC-2030)

Water contact angle (Excimer SImage Standard 100II)

Device fabrication 

Atomic-layer deposition (Anric Technologies AT-410; for ultrathin alumina deposition)

3-zone tube furnace (Asahi Rika, ARF3; for crystal growth of organic semiconducotors)

1-zone tube furnace (Asahi Rika, ARF1; for annealing)

2-source vacuum deposition with resistive heating (homebuilt; for metal deposition)

1-source vacuum deposition with resistive heating (homebuilt; for molecular deposition)

Spin coater (Mikasa MS-A100; for coating of resist and molecular films)

Oxygen plasma asher (Harrick Plasma PDC-32G; for cleaning and etching)

Ultraviolet light irragiation (Ushio SP7; for surface modification and etching)

Maskless photolithography (Arms System)

Lamination stage (Izumi tech; for heterostructure fabrication)

Common facilities 

In addition, these facilities (in Japanese) are available.